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This paper presents a wideband low-noise amplifier (LNA) architecture that is scalable in terms of the chip area and supply voltage and therefore is expected to offer superior performance with technology scaling. In order to secure low-voltage scalability and allow for potential rail-to-rail operation under an ultralow supply voltage, the CMOS inverter is chosen as the basic amplifier stage. The core...
This paper demonstrates a RF receiver front end circuit for multi-band orthogonal frequency division multiple access (MB-OFDM) using standard 0.18um complementery metal oxide semiconductor (CMOS) technology. The receiver front end includes a low-noise amplifier and a down conversion mixer. The proposed LNA uses transistor's intrinsic capacitor Cgd and only one inductor as input matching network to...
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