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This paper evaluates the ranges of application and physical limitations of lumped equivalent circuits and drift-diffusion models for the design of THz circuits. The predictions of these models have been compared with a Monte Carlo model, which was considered as a reference, and with measurements from doublers and triplers designed and fabricated by the Jet Propulsion Laboratory. Additionally, the...
Through silicon via (TSV) is considered today as the third dimension interconnect opening new perspectives in term of 3D integration. Design, material and process recommendations are required to achieve 3D stacked dies and evaluate electrical performance of such chips. As a consequence, equivalent models of this incontrovertible key component become more and more mandatory. In this paper, a full parametric...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
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