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With the development of flash technology, multilevel per cell (MLC) NAND flash memory has mastered the key market because of its storage capacity superiority. However, excessive density increment leads to decay of reliability of MLC NAND flash memory, thus an appropriate error correction code (ECC) is required to address this issue. This paper presents an efficient multi-strategy ECC scheme called...
This paper presents a novel low-complexity cross parity code, with a wide range of multiple bit error correction capability at a lower overhead, for improving the reliability in circuits over GF$(2^{m})$ . For an $m$ input circuit, the proposed scheme can correct $m\le D_{\textit {w}}\le 3^{{m}/{2}}-1$ multiple error combinations out of all the possible $2^{m}-1$ errors, which is superior to...
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