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Since the first demonstration of 60GHz connectivity in 1895 there has been much interest and promise in the future of mmW gigabit wireless technology. It has been only recently, with the emergence of millimeter wave and sub-THz (up to 300GHz) CMOS based technology and its potential for true monolithic single chip integration that one can envision a new class of systems and applications ranging from...
A low power 60 GHz On-Off Keying modulator for multi-Gb/s short range communications in 130-nm CMOS technology is presented. A transmission-gate is included in the modulator which function to block or pass the input signal. Simulation results show that a maximum data rate of 2-Gb/s is achieved with 20dB On/Off isolation and low dc power consumption of 13.2 mW from a supply voltage of 1.2V.
This letter presents a W-band wide-locking range divide-by-three injection-locked frequency divider (ILFD) implemented in 90 nm digital CMOS technology. The second-harmonic generator (SHG) is proposed to boost the second harmonic signal for effective harmonic mixing and extend the locking range of the frequency divider. The power consumption of the divider is 10.8 mW and the operation frequency of...
Millimeter-wave (mm-wave) Radio-over-Fiber (RoF) can be described as mm-wave wireless links in combination with large bandwidth fiber optic interconnections. CMOS technology demonstrated the potential for wireless applications in mm-wave frequencies with advantages of low power consumption, high level of integration capability with other analog and digital circuits, and potentially low cost for mass...
This paper discusses the design of a 60 GHz low noise amplifier (LNA) using a standard low power SOI CMOS process from ST Microelectronics. First, we outline the technology as well as the mm-wave design challenges. Using recent work on coplanar waveguide (CPW) modeling, we describe how it's possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip...
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