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This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 mum thick top copper levels, integrated in an Advanced Low Power 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current...
New guiding structure for millimeter-wave integrated circuits was proposed in this paper. Since surfaces of dielectric substrates for printed boards are usually roughened to make tight copper-coating, it was found out that effective conductivities of surfaces of the copper foils, attaching on the dielectric substrate, more degraded than those of the opposite surfaces of the copper foils, facing an...
The paper discusses a number of important considerations in the design of differential VCO known as -G/sub M/ LC-tank VCO in Si technologies. The availability of multiple interconnect layers, culminating in a thick electroplated Cu (bump) layer, has led to significant improvements in the Q-factor of tank circuit inductors. In addition, the use of symmetric differential inductor structures can result...
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