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This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 mum thick top copper levels, integrated in an Advanced Low Power 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current...
A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath...
The protection inductor is designed to protect the power supply of the pulsed high magnetic field facility. The protection inductor consists of several coils in circle arrangement and in series. With ANSYS, the electrical characteristics and the mechanical characteristics of the protection inductor are calculated and optimized. Furthermore, machining error during the manufacturing process is considered...
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