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Electrodes with nano-scale gaps have been fabricated using metallic nano-wires, derived via milling of thin films with focused ion beam (FIB) and passing current ~1012A/m2. Their I-V characteristics measured at a pressure ~10-6 mbar are shown to follow Child-Langmuir law or Fowler-Nordheim field emission depending upon the gap.
Electromigration-induced void evolutions in various dual-inlaid Copper (Cu) interconnect structures were simulated by applying a phenomenological model resorting to Monte Carlo based simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can...
In flip-chip solder joints, Cu has been used as a under-bump metallization (UBM) for its excellent wettability with solders. In addition, electromigration has become a crucial reliability concerns for fine-pitch flip chip solder joints. In this paper, 3D finite element method was employed to simulate the current density distribution for the eutectic SnPb solder joints with 5 mum, 10 mum, and 20 mum...
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