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We developed a compact TO-CAN module with a 1.3-μm InGaAlAs directly-modulated laser. We achieved a record relaxation oscillation frequency slope value of 4.85 GHz/mA½ and a 40-Gbps modulated transmission over a 40-km-long single-mode fiber.
Resonant peaks in plasmonic dots-in-a-well infrared detector is reported. The detectors used here have active layers with InAs quantum dots embedded in InGaAs/GaAs quantum wells. The active region is embedded in heavily n-doped GaAs top and bottom contacts and has a thick Al0.7Ga0.3As layer below the bottom contact as a cladding.
A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. Jth = 260 A/cm2 at λ=1002.5 nm is achieved for this integrated system.
The Ag-metal bonding conditions for the double-metal waveguide (DMW) of terahertz quantum cascade lasers (THz-QCLs) were investigated. GaAs wafers were bonded together with Ag-metal layers by applying high-pressure and heat. We achieved successful Ag bonding at 400degC with an applied pressure of 38.5 kg/cm2 for 30 min in N2 ambient. A thin Ti adhesion layer was inserted between Ag and GaAs. The Ti...
Integrating III-V materials on Si is a promising candidate to realize both passive and active optical functions on a single silicon chip. We have developed this heterogeneous integration technology by means of an adhesive die-to-wafer bonding process under a low temperature. In this paper, efficient evanescent coupling between SOI waveguides and heterogeneously-integrated III-V pin photodetectors...
Recent progress in the up-conversion of THz signals to the near-infrared region using the second order non-linearity of GaAs is presented. The process is used to demonstrate phase matched intra-cavity THz sideband generation at lambda~1.55mum within a THz quantum cascade laser (f=2.8THz). Furthermore, the phase matched point is shown to be tunable over a wide wavelength range via engineering of the...
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