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We present a study of Ti implanted Si layers with doses in the 1013-1016 cm-2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm-2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of...
The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.
ZnO:Al/n-Si heterojunction solar cells were made by rf magnetron sputtering. Their interfacial structure was analysed by transmission electron microscopy (TEM). These TEM studies reveal the existence of a non-intentionally grown tunnel oxide layer between the Si wafer and the ZnO:Al film, and thus the devices are actually of the type SIS. The current transport properties of the heterojunction are...
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