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Degradation and recovery of a multi-layer high-k SiGe pMOSFET due to the negative bias temperature instability (NBTI) is modeled on the basis of a refined non-radiative multi-phonon (NMP) theory. As the SiGe-layer forms a quantum-well inside the substrate, quantum mechanical effects like subbands are incorporated into the model. In combination with a distribution of defects featuring different energies,...
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