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Despite the successful application of Ge2Sb2Te5 thin films in the phase change memory devices, many fundamental issues related to the crystallization process are not fully understood. Structure of as-deposited and annealed at 160 and 250 °C films were investigated by XRD and TEM methods: amorphous, fcc and hcp structures were determined, respectively. Temperature dependencies of the resistivity for...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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