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Carbon Nanotube Field Effect Transistors (CNTFET) are promising nano-scaled devices for implementing high performance, very dense and low power circuits. The core of a CNTFET is a carbon nanotube. Its conductance property is determined by the so-called chirality of the tube; chirality is difficult to control during manufacturing. This results in conducting (metallic) nanotubes and defective CNTFETs...
In this paper, we have proposed the compact modeling of ballistic CNTFET and the performance analysis of the developed model using various characteristics. The carbon nanotube transistors (CNTFET) are currently considered and most promising component to replace the generation of MOSFET transistor, especially in order to surpass the short channel effects in the component. For this new generation of...
In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerical calculation results. This model can be implemented with a hardware description language (HDL) language...
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