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CMOS compatible photonic integrated circuits have gained great attentions in short haul interconnects applications because of the promises to tackle the issues of traditional copper interconnects. Towards the monolithic integration of electronics and photonics, lots of efforts have been made to decrease the device footprint by using surface plasmon polaritons (SPPs), in order to enhance performances...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
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