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Depth-resolved IR photoemission microscopy was applied for localization of defects causing leakage currents within Through Si Vias (TSVs). Specifically, analyses of the changes in intensity and spatial distribution of the detected emission, as a function of the focal plane position, allow quantification of the depth of defects within the TSV. Physical failure analysis verified the presence of the...
We describe a wafer analysis methodology which uses test data, emission data and CAD data to accurately predict the location and type of defect. The methodology described enabled us to know the location with metal layer information and type of defect before performing destructive physical analysis.
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