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Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Iron-chromium magnetic alloy has received attention recently as a soft magnetic material that can be used in an alternating magnetic field. A technique for improving its properties by increasing the aluminum content was studied. An increase in its amplitude-relative permeability in an alternating magnetic field occurs when the aluminum composition is increased to 5% from 1%, in spite of a decrease...
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