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The microstructure, crystallization behavior and electrical resistivity of different Fe-M-O (M=Hf,Zr) films prepared by the rf magnetron sputtering technique were investigated. In the as-deposited state, the structures of Fe-M-O films with a solute content of 13 to 22.7 at% Hf and 15 to 38 at% O, or of 5 to 13 at% Zr and 8 to 30 at% O, were found to consist of a bec phase with grain diameters below...
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