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This paper presents a physical model based on charge transport in order to investigate the electroforming and switching processes of ReRAMs. This model is based on the generation and annihilation of oxygen vacancies (Vö) along the metal-oxide interfaces and their migration through the oxide. The major driving forces governing these processes are the electric field, temperature and temperature gradient...
In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a...
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