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The large negative Vfb shift by capping a thin layer of Me2O3 (Me= Gd, Y or Dy) on SiO2 and HfO2 with TaN metal gate was investigated. It was found that the negative Vfb shift is due to the dipole formation at MeSiO-SiO2 interface. The local bonding asymmetry is proposed to be the underlying reason for the dipole formation.
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