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SRAMs based on tunneling field effect transistors (TFETs) consume very low static power, but the unidirectional conduction inherent to TFETs calls for special care when designing the SRAM cell. In this work, we make the following contributions, (i) We perform the first study of 6T TFET SRAMs based on both n-type and p-type access transistors and determine that only inward p-type TFETs are suitable...
Steep sub-threshold transistors are promising candidates to replace the traditional MOSFETs for sub-threshold leakage reduction. In this paper, we explore the use of Inter-Band Tunnel Field Effect Transistors (TFETs) in SRAMs at ultra low supply voltages. The uni-directional current conducting TFETs limit the viability of 6 T SRAM cells. To overcome this limitation, 7 T SRAM designs were proposed...
Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and high-k/metal gate stack are demonstrated with high Ion/Ioff ratio (>104). At VDS = 0.75V, a record on-current of 20??A/??m is achieved due to higher tunneling rate in narrow tunnel gap In0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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