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The reliability of sub-40 nm SONOS NAND devices with various tunnel oxide thickness and FinFET structures are studied for future NAND Flash application. SONOS intrinsically has slow erase speed and high erase saturation for tunnel oxide ranging from 25 to 45 Aring. Furthermore, the endurance degradation occurs very early at low P/E<10, owing to the nature of electron de-trapping mechanism at tunnel...
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