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For Solid-State Drive (SSD) applications cycling endurance of NAND flash is a critical challenge. In this work the endurance reliability of BE-SONOS NAND is thoroughly examined. Using dual CV/IV tests the impact of interface state (Dit) generation/annealing and real charge trapping (Q) on the endurance degradation has been clearly identified. For BE-SONOS with pure thermal oxide O1, the endurance...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
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