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We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A thin film optoelectric transformer consisting of a p-n junction photocell (500??500 ??m2) and a multilayer spiral coil transformer (1.4??1.4 mm2), monolithically fabricated on a Si substrate, is proposed, and its fundamental characteristics are described. The optical power from a layer diode (LD) is converted into electric power by the photocell, and the photocurrent is then converted into an output...
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