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Recent studies of single electron transport through a single dopant atom in nanoscale field-effect transistors (FETs) have revealed that discrete dopants can work as quantum dots (QDs). In nanoscale FETs with higher channel doping, dopant atoms may work also as traps for single electrons. This provides the frame model for a new type of device: single dopant memory. We observed single-electron trapping...
The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate), short-channel length, source/drain junction depths, substrate (body) doping, strained silicon thin-film thickness, gate work function, and other device parameters. The model correctly...
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