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We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices...
Two 23 GHz low-noise amplifier (LNA) have been designed and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors. In the designed LNAs, the structure of cascode amplifier with source inductive degeneration is used. All high-Q above-IC inductors have been implemented by thin-film wafer-level packaging (WLP) technology. The fabricated one-stage LNA has a good linearity where...
A VCO-based RF modulator employing multiphase Pulse Width Modulation (PWM) is presented. The proposed RF modulator encodes the baseband signal into a set of multiphase PWM signals which are generated by a VCO-based opamp. The use of PWM avoids broadband quantization noise which is produced by ΣΔ modulation used in other RFDAC-based modulators. The prototype IC is fabricated in a 45nm CMOS process,...
A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum2 is obtained from VNCAPs of 1 times (M1 - M5) + 2 times (M6 - M7) metal-layer configuration after the open-short de-embedding procedure. The proposed model consists of main series capacitance...
Based on hardware measurement of 45nm RFCMOS and 130nm SiGe BiCMOS wafers, we present the first experimental investigation of the accuracy of various de-embedding techniques for high-frequency (up to 110GHz) on-wafer s-parameter characterization. The results clearly show that 4-port COMPLETE de-embedding offers accurate results only if the non-ideality of resistor standards is properly taken into...
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