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A stacked amplifier architecture has been used to achieve high RF output power levels in sub-100nm CMOS. The stacking makes it possible to both operate the power amplifier (PA) from a large supply voltage and implement RF power combining. As a proof of concept, a 6.5-GHz PA has been integrated in a 65-nm standard CMOS technology. The amplifier achieves 27.4-dBm output power with an efficiency of 19...
A wideband CMOS mm-Wave amplitude detector for on-chip self-test and calibration is presented. The high-conversion-gain detector enables accurate on-chip amplitude measurements and allows for the prediction of key RF parameters. The detector operates across the 60 GHz band and achieves a dynamic range of 0-0.5 V and a sensitivity of -9 V/V. The detector's practical use in mm-wave Built-in-Self-Test...
Two 23 GHz low-noise amplifier (LNA) have been designed and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors. In the designed LNAs, the structure of cascode amplifier with source inductive degeneration is used. All high-Q above-IC inductors have been implemented by thin-film wafer-level packaging (WLP) technology. The fabricated one-stage LNA has a good linearity where...
A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used...
This paper addresses a key concern of RFIC designers: RF device models are extracted from measurements of common source (CS) devices, but are used in un-common source (UCS) RFIC designs. As well as validating RF models in a complete functional IC, we also introduce flexible active building cells, i.e. intermediate merged cascode cells (MCC) and cross couple pairs (CCP). A good match between measurements...
In this paper we present a wireless RF powering system dedicated to a cochlear implant. Most current systems use discrete components to achieve the back telemetry power supply. In order to achieve an efficient power consumption and a minimum size of the implant, our RF powering system is conceived with MOS transistors in order to have an integrated system. Using the signal recovered by the inductive...
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