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A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins...
This paper presents a fully integrated single-ended low noise amplifier (LNA) for GSM (GSM850 and GSM900) and UMTS (UMTS Band V and VI). The design and implementation is based on inductively-degenerated common-source (IDCS) using 0.18 μm CMOS technology with on-chip inductors at the input circuit for input matching and extra on-chip RL components at load tank for output matching. Post layout simulation...
A systematic system-level design methodology for dual-band RF CMOS receiver is proposed. The methodology helps the designer to find the optimum set of specifications of the receiver's building blocks for minimizing the power consumption. Our analysis is based on analytical expressions for the input referred noise, input referred third order intercept point and gain as a function of the frequency for...
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