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Tetrakis (diethylamino) hafnium and tetrakis (diethylamino) titanium were used for the atomic layer deposition (ALD) of HfO2 and TiO2 films on silicon (100) substrates with water being the oxidant. Studies on the decomposition temperatures of both metal precursors within the reactor and on carbon impurity helped determine the optimal ALD temperature range. X-ray photoelectron spectroscopy showed that...
Tetrakis (diethylamino) hafnium (TDEAH), tetrakis (diethylamino) titanium (TDEAT) and H2O were used for the atomic layer deposition of HfO2 and TiO2 films on silicon substrates. X-ray Photoelectron Spectroscopy showed that after a short Ar+ sputtering for removing surface contaminants, both HfO2 and TiO2 films were found to be essentially carbon free. While HfO2 remained at +4 chemical state after...
A direct high-k/Si gate stack has been proposed for gate oxide scaling. With LaCe-silicate, an EOT of 0.64 nm with an average dielectric constant (kav) of 17.4 has been obtained and an extremely low gate leakage current (Jg) of 0.65 A/cm2. The flatband voltage (Vfb) can be controlled by the compositional ratio of La in the LaCe-silicate layer. Furthermore, incorporation of Ge atom into the silicate...
We report what is believed to be the first measurements of dielectric properties in the terahertz frequency range of different types of water molecules existing in the bulk, structural or interfacing forms in the nanostructured alumina oxyhydroxide (NAO). We show that the dielectric permittivity associated with these kinds of water molecules differ from that of liquid bulk water.
The Rutherford backscattering spectrometry (RBS) technique was employed for the growth investigation of Ti-rich interface layers in the annealed Cu(Ti) dielectric-layer . Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be appropriate method for the growth analysis of the Ti-rich interface layers.
Electrical properties of Al/SrTiO3 /n-Si, metal-insulator-semiconductor (MIS) structure have been carried out by employing capacitance measurements. Thin films of SrTiO3 having thicknesses 50, 30 and 15 nm were grown on n-Si (ND= (2-10) times 1015 cm-3) by metal organo-chemical vapor deposition (MOCVD). Effective dielectric constant (k) of SrTiO3 was found to be much lesser than the theoretical value...
The HfO2/Hf stacked film has been applied as the gate dielectric in MOS devices. The HfO2 thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAH and O3 as precursors, Prior to the deposition of HfO2 film, a thin Hf metal layer was deposited as an intermediate layer. The deposition temperature of HfO2 thin film was 350degC and its resulted thickness was...
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