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Gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are high priority research topics of the present day. The ability to increase the drive current through a multi-channel (MC) architecture is a unique feature in GAA devices. Limitations in the fabrication process may result in non-circular cross-section of GAA MOSFETs. The most practical approach is the elliptical cross-section...
Carbon nanotubes with their superior properties have proved to be a potential alternative device to CMOS. In this paper, circuit optimization methods for high performance and low power CNFEFT circuit are proposed. The proposed design methods for CNTFET circuit address how to decide the optimum CNTFET parameters such as pitch, diameter, number of CNTs (carbon nanotube), optimum fan-out factor and logical...
Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET. Thus, an investigation of the SET propagation through a 10-inverter logic chain is performed in the 218-418 K temperature range, and the threshold LET...
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