Highly efficient rf impedance matching network for ICP sources
Contrary to capacitive coupled plasmas (CCP) inductively coupled plasmas (ICP) offer a higher plasma density and therefore provide for higher deposition or etch rate and herewith a high efficiency for industrial low pressure plasma processes.
In the following we will introduce a new impedance matching network, which was specifically developed for the requirements of the operation of inductive plasmas and especially for the use in an industrial application.
For the application in production systems detailed knowledge of the plasma properties, like homogeneity and ion energy distribution is required. Plasma diagnostics and calculations of the plasma density distribution will be shown. Finally, the application in a production system, which fully automatically processes 1200 substrates of size 156 mm × 156 mm per hour on a compact 19 m2 footprint, is introduced.