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In this paper, the development of organic field‐effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide‐bandgap (WBG) small‐molecule organic semiconductor material [2‐(9‐(4‐(octyloxy)phenyl)‐9H‐fluoren‐2‐yl)thiophene]3 (WG3) is reported. The WG3 NSs are prepared from phase separation by spin‐coating blend solutions of WG3/trimethylolpropane (TMP), and...
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next‐generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high‐density storage, high‐switching speed, and reliable endurance properties. Nonvolatile...
In article number 1703126, Su‐Ting Han, Vellaisamy A. L. Roy, Ye Zhou, and co‐workers summarize the recent developments in flexible organic non‐volatile data storage devices from transistor based memory to resistive memory. Growing endeavors have been made to achieve high‐density storage, high‐switching speed and reliable endurance properties. The fantastic nonvolatile memory applications will set...
In article number 1704024, Cheolmin Park and co‐workers successfully fabricate epitaxially grown ferroelectric polymer film on semiconducting rubrene single crystal micropatterned via selective contact evaporation printing. The highly oriented lamellae with two degenerated orientations are explained by the crystallographic lattice match between the ferroelectric polymer and rubrene, giving rise to...
Epitaxial crystallization of thin poly(vinylidene fluoride‐co‐trifluoroethylene) (PVDF‐TrFE) films is important for the full utilization of their ferroelectric properties. Epitaxy can offer a route for maximizing the degree of crystallinity with the effective orientation of the crystals with respect to the electric field. Despite various approaches for the epitaxial control of the crystalline structure...
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