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Although transition metal dichalcogenides (TMDs) are attractive for the next‐generation nanoelectronic era due to their unique optoelectronic and electronic properties, carrier scattering during the transmission of electronic devices, and the distinct contact barrier between the metal and the semiconductors, which is caused by inevitable defects in TMDs, remain formidable challenges. To address these...
In article number 1901791, Lin Han, Hong Liu, Lin Gu, and co‐workers present a facile and effective defects‐patching approach via nitrogen plasma doping for inevitable vacancies in transition metal dichalcogenides, which opens up new opportunities for the use of high‐performance 2D devices in practical electronic applications. In the cover, the five‐color stone in the hands of Nuwa refers to the nitrogen...
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