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Exfoliation of layered structures such as MoS2 (exemplified here by layered structure of Antelope Canyon, USA) strongly depends on the intercalator used. As found by M. Pumera and co‐workers on page 605, n‐Bu‐Li and t‐Bu‐Li produce a more efficient exfoliation of MoS2 than Me‐Li. Exfoliation with n‐Bu‐Li and t‐Bu‐Li gives rise to MoS2 sheets more catalytic for the hydrogen evolution reaction than...
MoS2 and other transition metal dichalcogenides (TMDs) have recently gained a renewed interest due to the interesting electronic, catalytic, and mechanical properties which they possess when down‐sized to single or few layer sheets. Exfoliation of the bulk multilayer structure can be achieved by a preliminary chemical Li intercalation followed by the exfoliation due to the reaction of Li with water...
Ever since the discovery of graphene, increasing efforts have been devoted to the use of this stellar material as well as the development of other graphene‐like materials such as thin‐layer transition metal dichalcogenides and oxides (TMD/Os) for a variety of applications. Because of their large surface area and unique optical properties, these two‐dimensional materials with a size ranging from the...
Molybdenum disulfide (MoS2) and tungsten disulfide (WS2), two representative transition metal dichalcogenide materials, have captured tremendous interest for their unique electronic, optical, and chemical properties. Compared with MoS2 and WS2, molybdenum ditelluride (MoTe2) and tungsten ditelluride (WTe2) possess similar lattice structures while having smaller bandgaps (less than 1 eV), which is...
Transition metal dichalcogenides (TMDs), as one of potential electrocatalysts for hydrogen evolution reaction (HER), have been extensively studied. Such TMD‐based ternary materials are believed to engender optimization of hydrogen adsorption free energy to thermoneutral value. Theoretically, cobalt is predicted to actively promote the catalytic activity of WS2. However, experimentally it requires...
The experimental observation of band‐to‐band tunneling in novel tunneling field‐effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate‐coupling efficiency enabled by two‐dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band‐to‐band tunneling current and an ambipolar transport.
Nonvolatile field‐effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating‐gate...
In article number 1700639, Liang He, Liqiang Mai and co‐workers, develop a novel microfabrication process to obtain an alternating stacked MoS2@graphene/carbon and carbon nanotubes/carbon microelectrodes‐based microsupercapacitor. The energy and power performance of the fabricated microsupercapacitor are enhanced by the unique alternating stacked structures. This carbon‐MEMS‐based microfabrication...
A novel process to fabricate a carbon‐microelectromechanical‐system‐based alternating stacked MoS2@rGO–carbon‐nanotube (CNT) micro‐supercapacitor (MSC) is reported. The MSC is fabricated by successively repeated spin‐coating of MoS2@rGO/photoresist and CNT/photoresist composites twice, followed by photoetching, developing, and pyrolysis. MoS2@rGO and CNTs are embedded in the carbon microelectrodes,...
Following research on two‐dimensional (2D) transition metal dichalcogenides (TMDs), zero‐dimensional (0D) TMDs nanostructures have also garnered some attention due to their unique properties; exploitable for new applications. The 0D TMDs nanostructures stand distinct from their larger 2D TMDs cousins in terms of their general structure and properties. 0D TMDs possess higher bandgaps, ultra‐small sizes,...
Large‐scale production of high‐quality tungsten disulfide (WS2) monolayers is a prerequisite for potential device applications using this promising transition metal dichalcogenide semiconductor. The most researched technique is chemical vapor deposition, typically involving the reaction of sulfur vapors with tungsten oxide. Other techniques such as physical vapor deposition have been explored with...
The recent exploration of semiconducting two‐dimensional (2D) transition metal dichalcogenides (TMDs) with atomic thickness has taken both the scientific and technological communities by storm. Extensively investigated TMD that are accessible by large‐scale synthetic methods materials are remarkably stable, such as MoS2 and WSe2. They allow superior gate control due to their 2D nature and favorable...
Two‐dimensional (2D) ultra‐thin materials beyond graphene with rich physical properties and unique layered structures are promising for applications in electronics, chemistry, energy, and bioscience, etc. The interaction mechanisms among the structures, chemical compositions and physical properties of 2D layered materials are critical for fundamental nanosciences and the practical fabrication of next‐generation...
Graphene‐like single‐ or few‐layer semiconductors, such as dichalcogenides and buckled nanocrystals, possess direct and tunable bandgaps, and excellent electrical, optical, mechanical and thermal properties. This unique set of desirable properties of 2D semiconductors has triggered great interest in developing ultra‐thin 2D flexible electronic devices, which ranges from realizing better material quality...
Metal oxide‐based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel...
Strong light absorption, coupled with moderate carrier transport properties, makes 2D layered transition metal dichalcogenide semiconductors promising candidates for low intensity photodetection applications. However, the performance of these devices is severely bottlenecked by slow response with persistent photocurrent due to long lived charge trapping, and nonreliable characteristics due to undesirable...
The 2D semiconductor monolayer transition metal dichalcogenides, WS2 and MoS2, are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS2 and MoS2 by adjusting the layer number, leading to fine‐scale tuning of the interlayer interactions within...
There is an increasing demand for control over the dimensions and functions of transition metal dichalcogenides (TMDs) in aqueous solution toward biological and medical applications. Herein, an approach for the exfoliation and functionalization of TMDs in water via modulation of the hydrophobic interaction between poly(ε‐caprolactone)‐b‐poly(ethylene glycol) (PCL‐b‐PEG) and the basal planes of TMDs...
The mechanisms of carrier transport in the cross‐plane crystal orientation of transition metal dichalcogenides are examined. The study of in‐plane electronic properties of these van der Waals compounds has been the main research focus in recent years. However, the distinctive physical anisotropies, short‐channel physics, and tunability of cross layer interactions can make the study of their electronic...
Transition metal dichalcogenide (TMD) heterostructures have been widely explored due to the formation of type‐II band alignment and interlayer exciton. However, the studies of type‐I TMD heterostructures are still lacking, which limit their applications in luminescence devices. Here, the 1L/nL MX2 (n = 2, 3, 4; M = Mo, W; X = S, Se) lateral homojunction based on the layer‐dependent band gaps of TMD...
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