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In this study, Ta/NiFe/NiO/Ta films were prepared by magnetron sputtering. The Au layer inserted at the interface of Ta and NiFe significantly influences the exchange bias field (Hex) of the Ta/NiFe/NiO/Ta films. The Hex of the film with 0.9 nm Au layer increased by 28% compared with that of the film without a Au layer. The results show that the Au layer inserted at the interface of Ta and NiFe segregated...
(200) SnO2//(111) SrTiO3 (STO) epitaxial heterojunctions were fabricated using the laser molecular epitaxy technique. Sharp junction interface was confirmed by the high‐resolution transmission electron microscopy. The valence band offset and conduction band offset of the SnO2/STO heterojunction were determined to be 0.85 ± 0.20 and 0.45 ± 0.20 eV using XPS, respectively. It is found that a type‐II...
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