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Chemical mechanical planarization (CMP), being the important technique of realizing the surface planarization, has already been widely applied in the microelectronic and computer industry. The abrasive size employed in the CMP, far less than that employed in the conventional grinding and material removal during CMP, is on the order of atoms or clusters of atoms and molecules. Classical continuum mechanics...
Molecular dynamics simulations are performed on the atomic origin of the growth process of graphite‐like carbon film on silicon substrate. The microstructure, mass density, and internal stress of as‐deposited films are investigated systematically. A strong energy dependence of microstructure and stress is revealed by varying the impact energy of the incident atoms (in the range 1–120 eV). As the impact...
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