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In this work, fully transparent dual‐layer channel self‐aligned top‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs) are fabricated on glass substrates. Dual‐layer channel is consist of indium gallium zinc oxide with different partial pressure of oxygen while sputtering. An oxygen‐rich IGZO was deposited to control the threshold voltage and an oxygen‐poor IGZO was then...
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