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There is a tradeoff between the high photocurrent and the low dark current for the gallium oxide (Ga2O3) metal–semiconductor–metal photodetectors (PDs). Achieving a balance between the photocurrent and dark current is crucial to the final device's performance. Herein, indium zinc oxide (IZO) is introduced between the Ga2O3 and the metal contact for the first time. By adjusting the IZO interlayer thickness...
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