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We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE), and investigated their In compositional distribution by energy dispersive x‐ray spectroscopy (EDX). The In composition line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs...
GaN films grown by rf‐MBE on Si(110) substrates using AlN buffer layers are investigated. Single crystalline AlN films are obtained by Al pre‐deposition during the buffer layer growth. 2‐dimensional epitaxial growth mode of GaN is confirmed by in‐situ RHEED observations. HRXRD results show that the FWHM values of diffraction peaks decrease with the increase of the film thickness. Atomically flat GaN...
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