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A simple model is developed for characterization of current collapse caused by electron trapping in AlGaN/GaN HEMTs. Threshold voltages are extracted from near‐zero drain bias output conductance characteristics with respect to gate bias based on 0.2 μs pulsed I –V characteristics at different quiescent bias points. Other device parameters such as effective gate length and electron mobility are also...
InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe...
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