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High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack‐free wafers were obtained by implementation of an AlN/AlGaN super‐lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions,...
In this work, we have systematically investigated the technique of low‐temperature AlN interlayer in MOCVD growth of double heterojunction high‐electron‐mobility transistors buffer stacks on 200 mm Si (111) substrates. We have demonstrated that a continuous compressive stress can be maintained by insertion of interlayers which compensated a large tensile stress during cooling for a thick buffer. This...
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