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a‐SiOx:H (x < 2) thin film samples prepared in a PECVD system by using SiH4+CO2 gas mixture show strong room temperature visible photoluminescence (PL) at a photon energy of 2.1 eV. The PL spectrum of a single layer sample was observed to reshape due to the multiple reflection between two interfaces of the film. The orders of the resonance modes in the PL spectrum range of 1.5 eV‐2.5 eV, were calculated...
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