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AlInN is being considered to replace AlGaN as barrier material in high‐electron mobility transistors (HEMT) mainly due to the possibility to downscale the barrier layer thickness at coexistent higher drain current density. However, the stability of surface conditions which can strongly influence the electrical properties of the device has to be assured. In situ deposition of a SiN passivation layer...
In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative...
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