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An InAlN/AlN/GaN HEMT with Au‐free Ta‐based ohmic contacts and a high‐quality PECVD SiN pas‐sivation is reported. The ohmic contacts were annealed at 550 °C, resulting in a contact resistance of 0.64 Ωmm. The gate length was 50 nm. The device performance and the process were evaluated by performing DC‐, pulsed IV‐, RF‐, and load‐pull measurements. It was observed that current slump was effectively...
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