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We obtained the two‐ and three‐component nanostructures by means of ion implantation of low‐energy Co and Ba ions in the surface layers of Si and GaAs in combination with the post‐implantation annealing. We show that flat shaped nanocrystals (nanoislands) of two‐ and three‐component composition, Co‐Si and Ga‐Ba‐As, start forming at ion fluences of Φ = (6¸8)×1014 cm‐2. After the laser annealing and...
Binary thermodynamic data, successfully used for phase diagram calculations of binary system Ga‐As, Ga‐Bi and As‐Bi were used for prediction of phase equilibria in ternary Ga‐As‐Bi system. The parameters for the thermodynamic models of the constituent binary systems and those for the Ga‐As‐Bi system are optimized in this study using data on phase equilibria and data on the different alloys available...
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