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Films and nanostructures of β‐Ga2O3 were successfully grown by atmospheric‐pressure CVD (AP‐CVD) using metal Ga and H2O as source materials. It was confirmed that highly (‐201) oriented polycrystalline β‐Ga2O3 films can be obtained on c ‐plane sapphire (c ‐Al2O3) substrates by optimizing growth temperature (Tg) and source supply ratio of H2O to Ga. The optical gap energy of the β‐Ga2O3 film with a...
The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The thin films of silicon, boron and boron‐doped silicon were individually formed from the trichlorosilane gas, boron trichloride...
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