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Temperature‐ and pressure‐dependent Yb valence state in Yb5Rh4Ge10 has been investigated by means of Yb 3d hard X‐ray photoemission spectroscopy (HAXPES) and Yb L3 absorption spectroscopy (XAS). The mean Yb valence derived from the Yb 3d HAXPES is estimated to be at 300 K and decreases to at 20 K. On the other hand, the Yb valence deduced from the Yb L3 XAS at 300 K is almost constant...
We demonstrate the use of a combined ambient pressure and UHV photoemission system for absolute work function characterization. We describe measurements of the valence band position of Hydrogen Terminated Synthetic Diamond (HTSD) under different pressures. The diamond exhibits a nanoscale surface conductivity with a 2D hole gas of ≈10 nm depth. The same system also allows contact potential difference...
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