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We have studied optical properties of single In0.1Ga0.9N quantum wells with GaN barriers in close proximity to the wafer surface (<10 nm). We have found that at room temperature a balance of radiative, non‐radiative recombination and complex surface states effects results in an optimum cap thickness of 3nm for achieving highest brightness emitters. At low temperature, we observe a behaviour that...
Microphotoluminescence with one‐photon and two‐photon excitation has been employed to investigate localisation centres found in nanorod array LEDs. Quantum dot‐like features with spectral width less than 1 meV were observed originating from low dimensional carrier confinement within the nanorods. Two‐photon excitation was used to probe the individual localisation centres. The narrow peak PL energy...
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