The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on MOCVD grown Al1‐xInxN/AlN/GaN heterostructures with different AlN (interlayer) thicknesses, investigated by Surface Photovoltage Spectroscopy. The different contributions to SPV spectra from all the layers present within the structure have been analyzed. Below the GaN band gap SPV analysis has been performed, and the observed peaks related to red, yellow and green defect states in GaN...
Current‐voltage measurements with Schottky contacts in a planar back‐to‐back configuration have been performed for InAlN/AlN/GaN heterostructures with different AlN interlayer thicknesses. We have identified the onset of a 2‐dimensional electron gas (2DEG) controlled conduction from current‐voltage curves analyses. A model has been proposed to determine the 2DEG electrical properties and the effects...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.