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In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several...
The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and are reported. The In 3d, and N 1s XPS spectra results revealed In‐N and N‐In bonding states as well as small concentrations of In‐O and N‐O bonds, respectively in all samples. InN...
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