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Electrical properties and deep electron and hole traps spectra are compared for undoped n‐GaN films grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates at 850 °C (Group 1) and 950 °C (Group 2). Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low density of electron and hole traps, low leakage current of Schottky diodes. Group 2 samples are not very...
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