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One of the promising methods to obtain high optical output power from LEDs grown on Si is to eliminate the absorptive Si substrate. In this paper, we report how GaN‐based thin‐film LEDs grown on silicon (111) substrates by MOCVD were successfully transferred to a copper substrate by room‐temperature electroplating and how the original Si substrate was removed by HNA solution. After fabrication, the...
We investigated the characterization of dislocations for GaN epilayers grown by HVPE and MOCVD methods through wet‐chemical etching method, cathodoluminescence (CL) and high resolution X‐ray diffraction (HR‐XRD). The thickness of GaN epilayers grown by HVPE and MOCVD was prepared 15 μm and 5 μm, respectively. To evaluate etch pits density (EPD) of GaN epilayers by wet‐chemical etching, samples were...
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